Spin-Density and Charge-Density Excitations in the Paramagnetic Phase of Semiconductor Double Quantum Well Systems

P. G. Bolcatto and C. R. Proetto
Phys. Rev. Lett. 85, 1734 – Published 21 August 2000
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Abstract

The interplay of tunneling, Coulomb coupling, and many-body effects on the charge-density excitation (CDE) and spin-density excitation (SDE) of double quantum well systems has been analyzed. For increasing interwell distances, the system moves from the strong-tunneling regime (one-well limit) towards the zero tunneling but still strongly Coulomb-coupled regime, passing by the intermediate regime of a small but finite tunneling-induced gap (1meV). Important renormalizations due to many-body effects are found in the long-wavelength limit of the CDE and SDE, with the former exhibiting a logarithmic correction to the single-particle linear dependence on the tunneling-induced gap, and the latter exhibiting a soft mode in the weak-tunneling, low-density regime. The oscillator strength of the SDE soft mode has been calculated and found to be clearly measurable.

  • Received 2 December 1999

DOI:https://doi.org/10.1103/PhysRevLett.85.1734

©2000 American Physical Society

Authors & Affiliations

P. G. Bolcatto* and C. R. Proetto

  • Centro Atómico Bariloche and Instituto Balseiro, 8400 S. C. de Bariloche, Río Negro, Argentina

  • *Permanent address: Facultad de Formación Docente en Ciencias and Facultad de Ingeniería Química, Universidad Nacional del Litoral, Sgo. del Estero 2829, 3000 Santa Fe, Argentina.

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Vol. 85, Iss. 8 — 21 August 2000

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